反射式內(nèi)存節(jié)點(diǎn)卡提供了一個(gè)高速、低延遲、確定性接口，允許在多達(dá)256個(gè)獨(dú)立系統(tǒng)（節(jié)點(diǎn)）之間以高達(dá)170 Mbyte/s的速率共享數(shù)據(jù)。每個(gè)反射式內(nèi)存板可配置64 Mbyte或128 Mbyte板載SDRAM。本地SDRAM提供對(duì)存儲(chǔ)數(shù)據(jù)的快速讀取訪(fǎng)問(wèn)時(shí)間。寫(xiě)操作存儲(chǔ)在本地SDRAM中，并通過(guò)高速光纖數(shù)據(jù)路徑廣播到其他反射內(nèi)存節(jié)點(diǎn)。節(jié)點(diǎn)之間的數(shù)據(jù)傳輸是軟件透明的，因此不需要I/O開(kāi)銷(xiāo)。在峰值數(shù)據(jù)速率期間發(fā)送和接收FIFO緩沖區(qū)數(shù)據(jù)，以?xún)?yōu)化處理器和總線(xiàn)性能，保持高數(shù)據(jù)吞吐量。
網(wǎng)絡(luò)傳輸速率為43 Mbyte/s（4字節(jié)數(shù)據(jù)包）到170 Mbyte/s（64字節(jié)數(shù)據(jù)包）
動(dòng)態(tài)數(shù)據(jù)包大小，4到64字節(jié)的數(shù)據(jù)
最多256個(gè)節(jié)點(diǎn)
可連接300米以?xún)?nèi)的多模光纖，10公里以?xún)?nèi)的單模光纖
寫(xiě)入一個(gè)節(jié)點(diǎn)內(nèi)存的數(shù)據(jù)也會(huì)寫(xiě)入網(wǎng)絡(luò)上所有節(jié)點(diǎn)的內(nèi)存
高速、易于使用的光纖網(wǎng)絡(luò)（2.12 Gbaud串行）
VME傳輸速率40 MB
64兆字節(jié)或128兆字節(jié)SDRAM反射存儲(chǔ)器

Overview

The VME-5565 Reflective Memory node card provides a high-speed, low latency, deterministic interface that allows data to be shared between up to 256 independent systems (nodes) at rates up to 170 Mbyte/s. Each Reflective Memory board can be configured with either 64 Mbyte or 128 Mbyte of onboard SDRAM. The local SDRAM provides fast Read access times to stored data. Writes are stored in local SDRAM and broadcast over a high speed fiber-optic data path to other Reflective Memory nodes.The transfer of data between nodes is software transparent, so no I/O overhead is required. Transmit and Receive FIFOs buffer data during peak data rates to optimize processor and bus performance to maintain high data throughput.
    Network transfer rate of 43 Mbyte/s (4 byte packets) to 170 Mbyte/s (64 byte packets)
    Dynamic packet size, 4 to 64 bytes of data
    Up to 256 nodes
    Connection with multimode fiber up to 300m, single-mode fiber up to 10km
    Data written to memory in one node is also written to memory in all nodes on the network
    High speed, easy to use fiber-optic network (2.12 Gbaud serially)
    VME transfer rate 40 Mbytes
    64 Mbyte or 128 Mbyte SDRAM Reflective Memory
V7768-320001
VME-1064DCS
VME7807RC350-00780-411000
VME-7807RC-414001DCS
VME-MB-Z004
VMIACC-0584
VMIACC-5595-208DCS
VMICPCI-7806
VMIPCI-5565-110000
VMIVME-2510BDCS
VMIVME-2510B-100VMIVME2510B
VMIVME-2540-000
VMIVME-3122DCS
VMIVME-3122-210VMIVME3122
VMIVME-4116
VMIVME-4140 DCS
VMIVME-4140-001VMIVME4140
VMIVME-5565
VMIVME-7452
VMIVME-7459
VMIVME-7486DCS
VMIVME-7658
VMIVME-7698-345350-01 7698-345B
VMIVME-7700DCS
VMIVME-7700-111000
VMIVME-7700350-007700-111000H
VMIVME7740-841
VMIVME-7750-466000
VMIVME-7750-744000
VMIVME-7750-746000DCS
VMIVME-7807RC
VMIVME-7807RCVME-7807RC-424001DCS
WES13-3
WES5302-111DCS
WES5302-150
WES5302 WES5302-111
WESCOMD200VME
WESDACD20A
WESDACD20CDCS